Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
25
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.
SR 122.00
SR 2.44 Each (In a Tube of 50) (ex VAT)
SR 140.30
SR 2.806 Each (In a Tube of 50) (inc. VAT)
50
SR 122.00
SR 2.44 Each (In a Tube of 50) (ex VAT)
SR 140.30
SR 2.806 Each (In a Tube of 50) (inc. VAT)
50
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Technical Document
Specifications
Brand
STMicroelectronicsTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-32
Mounting Type
Through Hole
Maximum Power Dissipation
25 W
Minimum DC Current Gain
25
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
3 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.8 x 7.8 x 2.7mm
Maximum Operating Temperature
+150 °C
Product details
NPN Power Transistors, STMicroelectronics
Bipolar Transistors, STMicroelectronics
A broad range of NPN and PNP Bipolar Transistors from STMicroelectronics including General Purpose, Darlington, Power and High-Voltage devices in both SMT and Through-hole packages.