ROHM RSJ250P10 P-Channel MOSFET, 25 A, 100 V, 3-Pin D2PAK RSJ250P10TL

RS Stock No.: 124-6823Brand: ROHMManufacturers Part No.: RSJ250P10TL
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Technical Document

Specifications

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

100 V

Series

RSJ250P10

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.1mm

Typical Gate Charge @ Vgs

60 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

4.5mm

Forward Diode Voltage

1.2V

Country of Origin

Korea, Republic Of

Product details

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

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Stock information temporarily unavailable.

SR 59.25

SR 11.85 Each (In a Pack of 5) (ex VAT)

SR 68.14

SR 13.628 Each (In a Pack of 5) (inc. VAT)

ROHM RSJ250P10 P-Channel MOSFET, 25 A, 100 V, 3-Pin D2PAK RSJ250P10TL
Select packaging type

SR 59.25

SR 11.85 Each (In a Pack of 5) (ex VAT)

SR 68.14

SR 13.628 Each (In a Pack of 5) (inc. VAT)

ROHM RSJ250P10 P-Channel MOSFET, 25 A, 100 V, 3-Pin D2PAK RSJ250P10TL
Stock information temporarily unavailable.
Select packaging type

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

ROHM

Channel Type

P

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

100 V

Series

RSJ250P10

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

50 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

9mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.1mm

Typical Gate Charge @ Vgs

60 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

4.5mm

Forward Diode Voltage

1.2V

Country of Origin

Korea, Republic Of

Product details

P-Channel MOSFET Transistors, ROHM

MOSFET Transistors, ROHM Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more