Technical Document
Specifications
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Series
BSM
Pin Count
4
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
45.6 mm
Length
122mm
Height
17mm
Number of Elements per Chip
2
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature
MOSFET Transistors, ROHM Semiconductor
Stock information temporarily unavailable.
SR 4,057.00
SR 4,057.00 Each (ex VAT)
SR 4,665.55
SR 4,665.55 Each (inc. VAT)
1
SR 4,057.00
SR 4,057.00 Each (ex VAT)
SR 4,665.55
SR 4,665.55 Each (inc. VAT)
Stock information temporarily unavailable.
1
Technical Document
Specifications
Brand
ROHMProduct Type
SiC Power Module
Channel Type
Type N
Series
BSM
Pin Count
4
Channel Mode
Enhancement
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
150°C
Width
45.6 mm
Length
122mm
Height
17mm
Number of Elements per Chip
2
Country of Origin
Japan
Product details
SiC Power Modules, ROHM
The Module consists of a Silicon-Carbide (SiC) DMOS Power FET Devices with a Schottky Barrier Diode (SBD) across the Drain and Source.
Half-Bridge configuration
Low Surge Current
Low Power Switching Losses
High-Speed Switching
Low Operating Temperature


