Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N
P.O.A.
onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole
1
P.O.A.
onsemi NXH35C120L2C2SG 3 Phase IGBT Module, 35 A 650 V DIP26, Through Hole
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
1
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
onsemiMaximum Continuous Collector Current
35 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20.0V
Number of Transistors
6
Package Type
DIP26
Configuration
3 Phase
Mounting Type
Through Hole
Channel Type
N


