Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Maximum Operating Temperature
+175 °C
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.65mm
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
SR 42.80
SR 4.28 Each (In a Pack of 10) (ex VAT)
SR 49.22
SR 4.922 Each (In a Pack of 10) (inc. VAT)
Standard
10
SR 42.80
SR 4.28 Each (In a Pack of 10) (ex VAT)
SR 49.22
SR 4.922 Each (In a Pack of 10) (inc. VAT)
Standard
10
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Width
3.7mm
Typical Gate Charge @ Vgs
22 nC @ 10 V dc
Maximum Operating Temperature
+175 °C
Length
6.7mm
Minimum Operating Temperature
-55 °C
Height
1.65mm
Product details