Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
28.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
7.1 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Transistor Material
Si
Number of Elements per Chip
1
Width
6.22mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
25
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
60 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
150 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
28.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
7.1 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
6.73mm
Transistor Material
Si
Number of Elements per Chip
1
Width
6.22mm
Height
2.38mm
Minimum Operating Temperature
-55 °C
Product details