Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
18.5 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.29mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
SR 77.30
SR 7.73 Each (Supplied on a Reel) (ex VAT)
SR 88.90
SR 8.89 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
SR 77.30
SR 7.73 Each (Supplied on a Reel) (ex VAT)
SR 88.90
SR 8.89 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
18.5 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Length
10.29mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
13 nC @ 4.5 V
Width
9.65mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
4.83mm
Product details


