onsemi MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23
Technical Document
Specifications
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Length
3.04mm
Maximum Operating Temperature
+150 °C
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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SR 1,710.00
SR 0.57 Each (On a Reel of 3000) (ex VAT)
SR 1,966.50
SR 0.656 Each (On a Reel of 3000) (inc. VAT)
3000
SR 1,710.00
SR 0.57 Each (On a Reel of 3000) (ex VAT)
SR 1,966.50
SR 0.656 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
onsemiChannel Type
P
Idss Drain-Source Cut-off Current
1.5 to 20mA
Maximum Drain Gate Voltage
25V dc
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
300 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Source Gate On-Capacitance
11pF
Dimensions
3.04 x 1.4 x 1.01mm
Length
3.04mm
Maximum Operating Temperature
+150 °C
Height
1.01mm
Width
1.4mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products