Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-16 A
Maximum Collector Emitter Voltage
-250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Country of Origin
Korea, Republic Of
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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SR 29.63
Each (In a Tube of 25) (ex VAT)
SR 34.074
Each (In a Tube of 25) (inc VAT)
25
SR 29.63
Each (In a Tube of 25) (ex VAT)
SR 34.074
Each (In a Tube of 25) (inc VAT)
25
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-16 A
Maximum Collector Emitter Voltage
-250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Collector Base Voltage
400 V dc
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20.3 x 5.3 x 29mm
Country of Origin
Korea, Republic Of
Product details
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.