Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-300 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
SR 233.50
SR 4.67 Each (In a Tube of 50) (ex VAT)
SR 268.52
SR 5.37 Each (In a Tube of 50) (inc. VAT)
50
SR 233.50
SR 4.67 Each (In a Tube of 50) (ex VAT)
SR 268.52
SR 5.37 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
50
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-300 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Country of Origin
China


