Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
350 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V dc
Maximum Emitter Base Voltage
5 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
SR 348.50
SR 6.97 Each (In a Tube of 50) (ex VAT)
SR 400.78
SR 8.016 Each (In a Tube of 50) (inc. VAT)
50
SR 348.50
SR 6.97 Each (In a Tube of 50) (ex VAT)
SR 400.78
SR 8.016 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
50
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
8 A
Maximum Collector Emitter Voltage
350 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
50 W
Transistor Configuration
Single
Maximum Collector Base Voltage
350 V dc
Maximum Emitter Base Voltage
5 V dc
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China


