ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220

RS Stock No.: 864-8956Brand: onsemiManufacturers Part No.: FJP2145TU
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Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

120 W

Minimum DC Current Gain

8

Maximum Base Current

1.5A

Pin Count

3

Category

Power Transistor

Height

16.51mm

Minimum Operating Temperature

-55 °C

Dimensions

10.67 x 4.83 x 16.51mm

Maximum Operating Temperature

+125 °C

Length

10.67mm

Product details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

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Stock information temporarily unavailable.

P.O.A.

Each (In a Pack of 10) (ex VAT)

ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220

P.O.A.

Each (In a Pack of 10) (ex VAT)

ON Semiconductor, FJP2145TU, Emmitter Switched, NPN Power Transistor 5 A 0.202V, 3-Pin TO-220
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

5 A

Package Type

TO-220

Mounting Type

Through Hole

Maximum Power Dissipation

120 W

Minimum DC Current Gain

8

Maximum Base Current

1.5A

Pin Count

3

Category

Power Transistor

Height

16.51mm

Minimum Operating Temperature

-55 °C

Dimensions

10.67 x 4.83 x 16.51mm

Maximum Operating Temperature

+125 °C

Length

10.67mm

Product details

ESBC™ Power Transistor, Fairchild Semiconductor

Bipolar NPN power transistors designed for use in ESBC™ (Emitter-Switched Bipolar/MOSFET Cascode) configurations together with appropriate power MOSFET devices. This power switch configuration provides increased efficiency, flexibility and robustness and driving power is minimized due to the absence of Miller capacitance in the design.

Bipolar Transistors, Fairchild Semiconductor

Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more