Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 (SC-70) onsemi FDG6332C-F085

RS Stock No.: 166-2275Brand: onsemiManufacturers Part No.: FDG6332C-F085
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Technical Document

Specifications

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

600 mA, 700 mA

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOT-363 (SC-70)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

United States

Product details

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 (SC-70) onsemi FDG6332C-F085

P.O.A.

Dual N/P-Channel-Channel MOSFET, 600 mA, 700 mA, 20 V, 6-Pin SOT-363 (SC-70) onsemi FDG6332C-F085
Stock information temporarily unavailable.

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JOIN FOR FREE

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design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document

Specifications

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

600 mA, 700 mA

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOT-363 (SC-70)

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

700 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

300 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.25mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

1.1 nC @ 4.5 V, 1.4 nC @ 4.5 V

Height

1mm

Minimum Operating Temperature

-55 °C

Country of Origin

United States

Product details

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more