onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:2000, 4-Pin SOT-223
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
4
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
90 V
Maximum Collector Emitter Saturation Voltage
1.3 V
Length
6.5mm
Height
1.57mm
Width
3.5mm
Minimum Operating Temperature
-65 °C
Dimensions
6.5 x 3.5 x 1.57mm
Maximum Operating Temperature
+150 °C
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SR 1.17
Each (On a Reel of 1000) (ex VAT)
SR 1.346
Each (On a Reel of 1000) (inc. VAT)
1000
SR 1.17
Each (On a Reel of 1000) (ex VAT)
SR 1.346
Each (On a Reel of 1000) (inc. VAT)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
5 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
4
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
2000
Maximum Base Emitter Saturation Voltage
1.9 V
Maximum Collector Base Voltage
90 V
Maximum Collector Emitter Saturation Voltage
1.3 V
Length
6.5mm
Height
1.57mm
Width
3.5mm
Minimum Operating Temperature
-65 °C
Dimensions
6.5 x 3.5 x 1.57mm
Maximum Operating Temperature
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products