Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
50 V
Package Type
NMP
Mounting Type
Through Hole
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-60 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.9 x 2.5 x 4.5mm
Maximum Operating Temperature
+150 °C
PRICED TO CLEAR
Yes
Country of Origin
Japan
Product details
General Purpose PNP Transistors, Up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
2500
P.O.A.
2500
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
50 V
Package Type
NMP
Mounting Type
Through Hole
Maximum Power Dissipation
900 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
-60 V
Maximum Emitter Base Voltage
-5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.9 x 2.5 x 4.5mm
Maximum Operating Temperature
+150 °C
PRICED TO CLEAR
Yes
Country of Origin
Japan
Product details
General Purpose PNP Transistors, Up to 1A, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.