Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NT1G

RS Stock No.: 178-4300Brand: onsemiManufacturers Part No.: NVMFD5C478NT1G
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

23 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

6.3 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Malaysia

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

SR 5.34

Each (On a Reel of 1500) (ex VAT)

SR 6.141

Each (On a Reel of 1500) (inc VAT)

Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NT1G

SR 5.34

Each (On a Reel of 1500) (ex VAT)

SR 6.141

Each (On a Reel of 1500) (inc VAT)

Dual N-Channel MOSFET, 27 A, 40 V, 8-Pin DFN onsemi NVMFD5C478NT1G
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

27 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

23 W

Maximum Gate Source Voltage

±20 V

Width

6.1mm

Number of Elements per Chip

2

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

6.3 nC @ 10 V

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

Malaysia