Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Country of Origin
Korea, Republic Of
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SR 11.55
Each (In a Tube of 50) (ex VAT)
SR 13.282
Each (In a Tube of 50) (inc VAT)
50
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
10 A dc
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
100
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
3 V dc
Height
16.12mm
Width
4.9mm
Maximum Power Dissipation
40 W
Minimum Operating Temperature
-65 °C
Dimensions
10.63 x 4.9 x 16.12mm
Maximum Operating Temperature
+150 °C
Length
10.63mm
Country of Origin
Korea, Republic Of