N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220F onsemi FDPF8D5N10C

RS Stock No.: 181-1863Brand: onsemiManufacturers Part No.: FDPF8D5N10C
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.9mm

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Number of Elements per Chip

1

Height

16.07mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Country of Origin

China

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SR 9.54

Each (In a Tube of 1000) (ex VAT)

SR 10.971

Each (In a Tube of 1000) (inc VAT)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220F onsemi FDPF8D5N10C

SR 9.54

Each (In a Tube of 1000) (ex VAT)

SR 10.971

Each (In a Tube of 1000) (inc VAT)

N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220F onsemi FDPF8D5N10C
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

8.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.9mm

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Number of Elements per Chip

1

Height

16.07mm

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Country of Origin

China