N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 onsemi FDP4D5N10C

RS Stock No.: 181-1859Brand: onsemiManufacturers Part No.: FDP4D5N10C
brand-logo
View all in MOSFETs

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

China

Stock information temporarily unavailable.

Please check again later.

Stock information temporarily unavailable.

SR 15.69

Each (In a Tube of 800) (ex VAT)

SR 18.044

Each (In a Tube of 800) (inc VAT)

N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 onsemi FDP4D5N10C

SR 15.69

Each (In a Tube of 800) (ex VAT)

SR 18.044

Each (In a Tube of 800) (inc VAT)

N-Channel MOSFET, 128 A, 100 V, 3-Pin TO-220 onsemi FDP4D5N10C
Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

128 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

4.67mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.36mm

Typical Gate Charge @ Vgs

48 nC @ 10 V

Height

15.21mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Country of Origin

China