NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23

RS Stock No.: 626-3308Brand: NXPManufacturers Part No.: PMBFJ308,215
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Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 60mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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SR 0.74

Each (In a Pack of 10) (ex VAT)

SR 0.851

Each (In a Pack of 10) (inc. VAT)

NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10SR 7.40
20SR 14.80
30SR 22.20
40SR 29.60
50SR 37.00
60SR 44.40
70SR 51.80
80SR 59.20
90SR 66.60
100SR 74.00
110SR 81.40
120SR 88.80
130SR 96.20
140SR 103.60
150SR 111.00

SR 0.74

Each (In a Pack of 10) (ex VAT)

SR 0.851

Each (In a Pack of 10) (inc. VAT)

NXP PMBFJ308,215 N-Channel JFET, 25 V, Idss 12 to 60mA, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 10.

Production -

Available in multiples of 10.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

10

Available in multiples of 10
10SR 7.40
20SR 14.80
30SR 22.20
40SR 29.60
50SR 37.00
60SR 44.40
70SR 51.80
80SR 59.20
90SR 66.60
100SR 74.00
110SR 81.40
120SR 88.80
130SR 96.20
140SR 103.60
150SR 111.00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

NXP

Channel Type

N

Idss Drain-Source Cut-off Current

12 to 60mA

Maximum Drain Source Voltage

25 V

Maximum Gate Source Voltage

-25 V

Maximum Drain Gate Voltage

-25V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

50 Ω

Mounting Type

Surface Mount

Package Type

SOT-23 (TO-236AB)

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

N-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more