Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
80 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 60V to 80V, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
10
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Production pack (Reel)
10
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
80 V
Package Type
LFPAK, SOT-669
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
72 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.1mm
Transistor Material
Si
Length
5mm
Typical Gate Charge @ Vgs
12.5 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Height
1.1mm
Minimum Operating Temperature
-55 °C
Product details


