Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia BSS138PS,115

RS Stock No.: 792-0901PBrand: NexperiaManufacturers Part No.: BSS138PS,115
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Technical Document

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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P.O.A.

Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia BSS138PS,115
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Standard - each

Available in multiples of 40.

Production -

Available in multiples of 40.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

40

Available in multiples of 40
40P.O.A.
80P.O.A.
120P.O.A.
160P.O.A.
200P.O.A.
240P.O.A.
280P.O.A.
320P.O.A.
360P.O.A.
400P.O.A.
440P.O.A.
480P.O.A.
520P.O.A.
560P.O.A.
600P.O.A.

P.O.A.

Dual N-Channel MOSFET, 320 mA, 60 V, 6-Pin SOT-363 Nexperia BSS138PS,115
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 40.

Production -

Available in multiples of 40.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

40

Available in multiples of 40
40P.O.A.
80P.O.A.
120P.O.A.
160P.O.A.
200P.O.A.
240P.O.A.
280P.O.A.
320P.O.A.
360P.O.A.
400P.O.A.
440P.O.A.
480P.O.A.
520P.O.A.
560P.O.A.
600P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Nexperia

Channel Type

N

Maximum Continuous Drain Current

320 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

320 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.72 nC @ 4.5 V

Width

1.35mm

Minimum Operating Temperature

-55 °C

Height

1mm

Product details

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more