Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors
SR 1,590.00
SR 0.53 Each (On a Reel of 3000) (ex VAT)
SR 1,828.50
SR 0.61 Each (On a Reel of 3000) (inc. VAT)
3000
SR 1,590.00
SR 0.53 Each (On a Reel of 3000) (ex VAT)
SR 1,828.50
SR 0.61 Each (On a Reel of 3000) (inc. VAT)
3000
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Technical Document
Specifications
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
1.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
120 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
1.4mm
Length
3mm
Typical Gate Charge @ Vgs
6.4 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-65 °C
Height
1mm
Country of Origin
China
Product details