IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

RS Stock No.: 168-4794Brand: IXYSManufacturers Part No.: MMIX1T550N055T2
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

550 A

Maximum Drain Source Voltage

55 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

595 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

5.7mm

Country of Origin

Germany

Product details

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

SR 5,479.20

SR 273.96 Each (In a Tube of 20) (ex VAT)

SR 6,301.08

SR 315.054 Each (In a Tube of 20) (inc. VAT)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2

20

Available in multiples of 20
20SR 5,479.20
40SR 10,958.40
60SR 16,437.60
80SR 21,916.80
100SR 27,396.00
120SR 32,875.20
140SR 38,354.40
160SR 43,833.60
180SR 49,312.80
200SR 54,792.00
220SR 60,271.20
240SR 65,750.40
260SR 71,229.60
280SR 76,708.80
300SR 82,188.00

SR 5,479.20

SR 273.96 Each (In a Tube of 20) (ex VAT)

SR 6,301.08

SR 315.054 Each (In a Tube of 20) (inc. VAT)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD MMIX1T550N055T2
Stock information temporarily unavailable.

20

Available in multiples of 20
20SR 5,479.20
40SR 10,958.40
60SR 16,437.60
80SR 21,916.80
100SR 27,396.00
120SR 32,875.20
140SR 38,354.40
160SR 43,833.60
180SR 49,312.80
200SR 54,792.00
220SR 60,271.20
240SR 65,750.40
260SR 71,229.60
280SR 76,708.80
300SR 82,188.00

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

550 A

Maximum Drain Source Voltage

55 V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

23.25mm

Length

25.25mm

Typical Gate Charge @ Vgs

595 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

5.7mm

Country of Origin

Germany

Product details

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more