IXYS GigaMOS, HiperFET N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

RS Stock No.: 168-4790Brand: IXYSManufacturers Part No.: MMIX1F520N075T2
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

500 A

Maximum Drain Source Voltage

75 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

25.25mm

Typical Gate Charge @ Vgs

545 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

23.25mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.25V

Height

5.7mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

SR 2,642.20

SR 132.11 Each (In a Tube of 20) (ex VAT)

SR 3,038.53

SR 151.926 Each (In a Tube of 20) (inc. VAT)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2

20

Available in multiples of 20
20SR 2,642.20
40SR 5,284.40
60SR 7,926.60
80SR 10,568.80
100SR 13,211.00
120SR 15,853.20
140SR 18,495.40
160SR 21,137.60
180SR 23,779.80
200SR 26,422.00
220SR 29,064.20
240SR 31,706.40
260SR 34,348.60
280SR 36,990.80
300SR 39,633.00

SR 2,642.20

SR 132.11 Each (In a Tube of 20) (ex VAT)

SR 3,038.53

SR 151.926 Each (In a Tube of 20) (inc. VAT)

IXYS GigaMOS, HiperFET N-Channel MOSFET, 500 A, 75 V, 24-Pin SMPD MMIX1F520N075T2
Stock information temporarily unavailable.

20

Available in multiples of 20
20SR 2,642.20
40SR 5,284.40
60SR 7,926.60
80SR 10,568.80
100SR 13,211.00
120SR 15,853.20
140SR 18,495.40
160SR 21,137.60
180SR 23,779.80
200SR 26,422.00
220SR 29,064.20
240SR 31,706.40
260SR 34,348.60
280SR 36,990.80
300SR 39,633.00

Stock information temporarily unavailable.

Please check again later.

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

500 A

Maximum Drain Source Voltage

75 V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mounting Type

Surface Mount

Pin Count

24

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

830 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

25.25mm

Typical Gate Charge @ Vgs

545 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

23.25mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.25V

Height

5.7mm

Product details

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more