IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

RS Stock No.: 193-874Brand: IXYSManufacturers Part No.: MII100-12A3
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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SR 435.78

Each (ex VAT)

SR 501.15

Each (inc VAT)

IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount

1

Available in multiples of 1
1SR 435.78
2SR 871.56
3SR 1,307.34
4SR 1,743.12
5SR 2,178.90
6SR 2,614.68
7SR 3,050.46
8SR 3,486.24
9SR 3,922.02
10SR 4,357.80
11SR 4,793.58
12SR 5,229.36
13SR 5,665.14
14SR 6,100.92
15SR 6,536.70

SR 435.78

Each (ex VAT)

SR 501.15

Each (inc VAT)

IXYS MII100-12A3 Series IGBT Module, 135 A 1200 V, 7-Pin Y4 M5, Panel Mount
Stock information temporarily unavailable.

1

Available in multiples of 1
1SR 435.78
2SR 871.56
3SR 1,307.34
4SR 1,743.12
5SR 2,178.90
6SR 2,614.68
7SR 3,050.46
8SR 3,486.24
9SR 3,922.02
10SR 4,357.80
11SR 4,793.58
12SR 5,229.36
13SR 5,665.14
14SR 6,100.92
15SR 6,536.70

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

135 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Package Type

Y4 M5

Configuration

Series

Mounting Type

Panel Mount

Channel Type

N

Pin Count

7

Transistor Configuration

Series

Dimensions

94 x 34 x 30mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

Product details

IGBT Modules, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more