IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

RS Stock No.: 194-899Brand: IXYSManufacturers Part No.: IXGH32N170
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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Length

16.26mm

Width

5.3mm

Height

21.46mm

Dimensions

16.26 x 5.3 x 21.46mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Stock information temporarily unavailable.

SR 193.96

SR 193.96 Each (ex VAT)

SR 223.05

SR 223.05 Each (inc. VAT)

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole

SR 193.96

SR 193.96 Each (ex VAT)

SR 223.05

SR 223.05 Each (inc. VAT)

IXYS IXGH32N170 IGBT, 75 A 1700 V, 3-Pin TO-247AD, Through Hole
Stock information temporarily unavailable.

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

IXYS

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1700 V

Maximum Gate Emitter Voltage

±20V

Package Type

TO-247AD

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Length

16.26mm

Width

5.3mm

Height

21.46mm

Dimensions

16.26 x 5.3 x 21.46mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Product details

IGBT Discretes, IXYS

IGBT Discretes & Modules, IXYS

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in