IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

RS Stock No.: 920-0877Brand: IXYSManufacturers Part No.: IXFK26N120P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

1200 V

Series

HiperFET, Polar

Package Type

TO-264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

460 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

960 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

19.96mm

Typical Gate Charge @ Vgs

225 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.13mm

Transistor Material

Si

Height

26.16mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

SR 5,374.25

SR 214.97 Each (In a Tube of 25) (ex VAT)

SR 6,180.39

SR 247.216 Each (In a Tube of 25) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P

SR 5,374.25

SR 214.97 Each (In a Tube of 25) (ex VAT)

SR 6,180.39

SR 247.216 Each (In a Tube of 25) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXFK26N120P
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

1200 V

Series

HiperFET, Polar

Package Type

TO-264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

460 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

6.5V

Maximum Power Dissipation

960 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

19.96mm

Typical Gate Charge @ Vgs

225 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.13mm

Transistor Material

Si

Height

26.16mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more