Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
1200 V
Series
HiperFET, Polar
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
460 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
960 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
225 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.13mm
Transistor Material
Si
Height
26.16mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
SR 5,374.25
SR 214.97 Each (In a Tube of 25) (ex VAT)
SR 6,180.39
SR 247.216 Each (In a Tube of 25) (inc. VAT)
25
SR 5,374.25
SR 214.97 Each (In a Tube of 25) (ex VAT)
SR 6,180.39
SR 247.216 Each (In a Tube of 25) (inc. VAT)
25
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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
26 A
Maximum Drain Source Voltage
1200 V
Series
HiperFET, Polar
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
460 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
960 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
225 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
5.13mm
Transistor Material
Si
Height
26.16mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS