IXYS HiperFET, Polar N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

RS Stock No.: 920-0782Brand: IXYSManufacturers Part No.: IXFH36N50P
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar

Package Type

TO-247AD

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

540 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.26mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.3mm

Transistor Material

Si

Height

21.46mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

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Stock information temporarily unavailable.

SR 1,736.40

SR 57.88 Each (In a Tube of 30) (ex VAT)

SR 1,996.86

SR 66.562 Each (In a Tube of 30) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P

30

Available in multiples of 30
30SR 1,736.40
60SR 3,472.80
90SR 5,209.20
120SR 6,945.60
150SR 8,682.00
180SR 10,418.40
210SR 12,154.80
240SR 13,891.20
270SR 15,627.60
300SR 17,364.00
330SR 19,100.40
360SR 20,836.80
390SR 22,573.20
420SR 24,309.60
450SR 26,046.00

SR 1,736.40

SR 57.88 Each (In a Tube of 30) (ex VAT)

SR 1,996.86

SR 66.562 Each (In a Tube of 30) (inc. VAT)

IXYS HiperFET, Polar N-Channel MOSFET, 36 A, 500 V, 3-Pin TO-247AD IXFH36N50P
Stock information temporarily unavailable.

30

Available in multiples of 30
30SR 1,736.40
60SR 3,472.80
90SR 5,209.20
120SR 6,945.60
150SR 8,682.00
180SR 10,418.40
210SR 12,154.80
240SR 13,891.20
270SR 15,627.60
300SR 17,364.00
330SR 19,100.40
360SR 20,836.80
390SR 22,573.20
420SR 24,309.60
450SR 26,046.00

Stock information temporarily unavailable.

Please check again later.

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

36 A

Maximum Drain Source Voltage

500 V

Series

HiperFET, Polar

Package Type

TO-247AD

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Maximum Power Dissipation

540 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

16.26mm

Typical Gate Charge @ Vgs

93 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

5.3mm

Transistor Material

Si

Height

21.46mm

Minimum Operating Temperature

-55 °C

Product details

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series

N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more