Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
480 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
110 nC @ 10 V
Width
5.3mm
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
SR 51.12
SR 51.12 Each (ex VAT)
SR 58.79
SR 58.79 Each (inc. VAT)
Standard
1
SR 51.12
SR 51.12 Each (ex VAT)
SR 58.79
SR 58.79 Each (inc. VAT)
Stock information temporarily unavailable.
Standard
1
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
110 A
Maximum Drain Source Voltage
100 V
Package Type
TO-247
Series
HiperFET, Polar
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Maximum Power Dissipation
480 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
16.26mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
110 nC @ 10 V
Width
5.3mm
Height
21.46mm
Minimum Operating Temperature
-55 °C
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS