SMT N channel MOSFET,IRLML2803 0.91A 30V
Technical Document
Specifications
Channel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Series
HEXFET
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Height
1.02mm
Width
1.4mm
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P.O.A.
1
P.O.A.
1
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Technical Document
Specifications
Channel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Series
HEXFET
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Height
1.02mm
Width
1.4mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products