Infineon HEXFET N-Channel MOSFET, 270 A, 60 V, 3-Pin D2PAK IRLS3036TRLPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
270 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
380 W
Maximum Gate Source Voltage
-16 V, +16 V
Length
10.67mm
Typical Gate Charge @ Vgs
91 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Number of Elements per Chip
1
Height
9.65mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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SR 43.88
SR 21.94 Each (In a Pack of 2) (ex VAT)
SR 50.46
SR 25.231 Each (In a Pack of 2) (inc. VAT)
Standard
2
SR 43.88
SR 21.94 Each (In a Pack of 2) (ex VAT)
SR 50.46
SR 25.231 Each (In a Pack of 2) (inc. VAT)
Standard
2
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
270 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK (TO-263)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
380 W
Maximum Gate Source Voltage
-16 V, +16 V
Length
10.67mm
Typical Gate Charge @ Vgs
91 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Width
4.83mm
Number of Elements per Chip
1
Height
9.65mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Product details
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products