Infineon HEXFET N-Channel MOSFET, 17 A, 150 V, 3-Pin TO-220AB IRFB4019PBF

RS Stock No.: 688-6920Brand: InfineonManufacturers Part No.: IRFB4019PBFDistrelec Article No.: 30341319
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.02mm

Minimum Operating Temperature

-55 °C

Product details

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Stock information temporarily unavailable.

SR 53.10

SR 10.62 Each (In a Pack of 5) (ex VAT)

SR 61.06

SR 12.213 Each (In a Pack of 5) (inc. VAT)

Infineon HEXFET N-Channel MOSFET, 17 A, 150 V, 3-Pin TO-220AB IRFB4019PBF

SR 53.10

SR 10.62 Each (In a Pack of 5) (ex VAT)

SR 61.06

SR 12.213 Each (In a Pack of 5) (inc. VAT)

Infineon HEXFET N-Channel MOSFET, 17 A, 150 V, 3-Pin TO-220AB IRFB4019PBF
Stock information temporarily unavailable.

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Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

95 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

80 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.82mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.66mm

Typical Gate Charge @ Vgs

13 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.02mm

Minimum Operating Temperature

-55 °C

Product details

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more