Infineon HEXFET Dual N/P-Channel-Channel MOSFET, 1.7 A, 2.4 A, 20 V, 8-Pin MSOP IRF7507TRPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
1.7 A, 2.4 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
MSOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ, 270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
3mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V, 5.4 nC @ 4.5 V
Height
0.86mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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SR 4.05
SR 4.05 Each (ex VAT)
SR 4.66
SR 4.66 Each (inc. VAT)
Standard
1
SR 4.05
SR 4.05 Each (ex VAT)
SR 4.66
SR 4.66 Each (inc. VAT)
Standard
1
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Technical Document
Specifications
Brand
InfineonChannel Type
N, P
Maximum Continuous Drain Current
1.7 A, 2.4 A
Maximum Drain Source Voltage
20 V
Series
HEXFET
Package Type
MSOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
140 mΩ, 270 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.7V
Minimum Gate Threshold Voltage
0.7V
Maximum Power Dissipation
1.25 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Width
3mm
Transistor Material
Si
Number of Elements per Chip
2
Length
3mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
5.3 nC @ 4.5 V, 5.4 nC @ 4.5 V
Height
0.86mm
Minimum Operating Temperature
-55 °C
Product details
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products