Infineon N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF

RS Stock No.: 130-0948PBrand: InfineonManufacturers Part No.: IRF6648TRPBF
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.5mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Product details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
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Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
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10P.O.A.
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26P.O.A.
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30P.O.A.

P.O.A.

Each (Supplied on a Reel) (ex VAT)

Infineon N-Channel MOSFET, 86 A, 60 V DirectFET ISOMETRIC IRF6648TRPBF
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 2.

Production -

Available in multiples of 2.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

2

Available in multiples of 2
2P.O.A.
4P.O.A.
6P.O.A.
8P.O.A.
10P.O.A.
12P.O.A.
14P.O.A.
16P.O.A.
18P.O.A.
20P.O.A.
22P.O.A.
24P.O.A.
26P.O.A.
28P.O.A.
30P.O.A.

Stock information temporarily unavailable.

Please check again later.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

86 A

Maximum Drain Source Voltage

60 V

Series

DirectFET, HEXFET

Package Type

DirectFET ISOMETRIC

Mounting Type

Surface Mount

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.9V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

89 W

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.05mm

Number of Elements per Chip

1

Length

6.35mm

Typical Gate Charge @ Vgs

36 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

0.5mm

Minimum Operating Temperature

-40 °C

Forward Diode Voltage

1.3V

Product details

DirectFET® Power MOSFET, Infineon

The DirectFET® power package is a surface-mount power MOSFET packaging technology. DirectFET® MOSFETs is a solution to reduce energy losses while shrinking the design footprint in advanced switching applications.

Industry lowest on-resistance in their respective footprints
Extremely low package resistance to minimise conduction losses
Highly efficient dual-sided cooling significantly improves power density, cost and reliability
Low profile of only 0.7mm

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more