P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-220AB Infineon IRF5305PBF
Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
63 nC @ 10 V
Number of Elements per Chip
1
Width
4.69mm
Maximum Operating Temperature
+175 °C
Length
10.54mm
Forward Diode Voltage
1.3V
Height
8.77mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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SR 7.65
SR 7.65 Each (ex VAT)
SR 8.80
SR 8.80 Each (inc. VAT)
Standard
1
SR 7.65
SR 7.65 Each (ex VAT)
SR 8.80
SR 8.80 Each (inc. VAT)
Standard
1
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
P
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
55 V
Package Type
TO-220AB
Series
HEXFET
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
60 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Typical Gate Charge @ Vgs
63 nC @ 10 V
Number of Elements per Chip
1
Width
4.69mm
Maximum Operating Temperature
+175 °C
Length
10.54mm
Forward Diode Voltage
1.3V
Height
8.77mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products