Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK IRF4905LPBF

RS Stock No.: 650-3662Brand: InfineonManufacturers Part No.: IRF4905LPBFDistrelec Article No.: 30341278
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Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

55 V

Package Type

I2PAK (TO-262)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Height

10.54mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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SR 50.05

SR 10.01 Each (In a Pack of 5) (ex VAT)

SR 57.56

SR 11.512 Each (In a Pack of 5) (inc. VAT)

Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK IRF4905LPBF
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5SR 50.05
10SR 100.10
15SR 150.15
20SR 200.20
25SR 250.25
30SR 300.30
35SR 350.35
40SR 400.40
45SR 450.45
50SR 500.50
55SR 550.55
60SR 600.60
65SR 650.65
70SR 700.70
75SR 750.75

SR 50.05

SR 10.01 Each (In a Pack of 5) (ex VAT)

SR 57.56

SR 11.512 Each (In a Pack of 5) (inc. VAT)

Infineon HEXFET P-Channel MOSFET, 70 A, 55 V, 3-Pin I2PAK IRF4905LPBF

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5SR 50.05
10SR 100.10
15SR 150.15
20SR 200.20
25SR 250.25
30SR 300.30
35SR 350.35
40SR 400.40
45SR 450.45
50SR 500.50
55SR 550.55
60SR 600.60
65SR 650.65
70SR 700.70
75SR 750.75

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

55 V

Package Type

I2PAK (TO-262)

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

180 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Height

10.54mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Product details

P-Channel Power MOSFET 40V to 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more