Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
ThinPAK 8 x 8
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
P.O.A.
Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
5
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ C7
Package Type
ThinPAK 8 x 8
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
195 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si