Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0074 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si
SR 184.50
SR 3.69 Each (In a Tube of 50) (ex VAT)
SR 212.18
SR 4.244 Each (In a Tube of 50) (inc. VAT)
50
SR 184.50
SR 3.69 Each (In a Tube of 50) (ex VAT)
SR 212.18
SR 4.244 Each (In a Tube of 50) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
50
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ -T2
Package Type
I2PAK (TO-262)
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0074 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Si


