Infineon SiC N-Channel MOSFET, 30 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R017S7XTMA1

RS Stock No.: 284-737PBrand: InfineonManufacturers Part No.: IPDQ60R017S7XTMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

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P.O.A.

Infineon SiC N-Channel MOSFET, 30 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R017S7XTMA1
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1

Available in multiples of 1
1P.O.A.
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11P.O.A.
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14P.O.A.
15P.O.A.

P.O.A.

Infineon SiC N-Channel MOSFET, 30 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R017S7XTMA1
Stock information temporarily unavailable.
Select packaging type

Production pack (Reel)

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

600 V

Series

600V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more