Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1

RS Stock No.: 229-1833Brand: InfineonManufacturers Part No.: IPD50N08S413ATMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0132 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

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SR 91.80

SR 6.12 Each (In a Pack of 15) (ex VAT)

SR 105.57

SR 7.038 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15SR 91.80
30SR 183.60
45SR 275.40
60SR 367.20
75SR 459.00
90SR 550.80
105SR 642.60
120SR 734.40
135SR 826.20
150SR 918.00
165SR 1,009.80
180SR 1,101.60
195SR 1,193.40
210SR 1,285.20
225SR 1,377.00

SR 91.80

SR 6.12 Each (In a Pack of 15) (ex VAT)

SR 105.57

SR 7.038 Each (In a Pack of 15) (inc. VAT)

Infineon OptiMOS™ -T2 Silicon N-Channel MOSFET, 50 A, 80 V, 3-Pin DPAK IPD50N08S413ATMA1

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 15.

Production -

Available in multiples of 15.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

15

Available in multiples of 15
15SR 91.80
30SR 183.60
45SR 275.40
60SR 367.20
75SR 459.00
90SR 550.80
105SR 642.60
120SR 734.40
135SR 826.20
150SR 918.00
165SR 1,009.80
180SR 1,101.60
195SR 1,193.40
210SR 1,285.20
225SR 1,377.00

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

50 A

Maximum Drain Source Voltage

80 V

Series

OptiMOS™ -T2

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.0132 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Silicon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more