Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Please check again later.
Stock information temporarily unavailable.
SR 9.62
Each (In a Pack of 5) (ex VAT)
SR 11.063
Each (In a Pack of 5) (inc. VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Select packaging type
Standard
5
SR 9.62
Each (In a Pack of 5) (ex VAT)
SR 11.063
Each (In a Pack of 5) (inc. VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
5
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC