Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

RS Stock No.: 218-3033Brand: InfineonManufacturers Part No.: IPB120N06S4H1ATMA2
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

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SR 96.45

SR 19.29 Each (In a Pack of 5) (ex VAT)

SR 110.92

SR 22.184 Each (In a Pack of 5) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5SR 96.45
10SR 192.90
15SR 289.35
20SR 385.80
25SR 482.25
30SR 578.70
35SR 675.15
40SR 771.60
45SR 868.05
50SR 964.50
55SR 1,060.95
60SR 1,157.40
65SR 1,253.85
70SR 1,350.30
75SR 1,446.75

SR 96.45

SR 19.29 Each (In a Pack of 5) (ex VAT)

SR 110.92

SR 22.184 Each (In a Pack of 5) (inc. VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 5.

Production -

Available in multiples of 5.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

5

Available in multiples of 5
5SR 96.45
10SR 192.90
15SR 289.35
20SR 385.80
25SR 482.25
30SR 578.70
35SR 675.15
40SR 771.60
45SR 868.05
50SR 964.50
55SR 1,060.95
60SR 1,157.40
65SR 1,253.85
70SR 1,350.30
75SR 1,446.75

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

D2PAK (TO-263)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.002 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more