Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO263-3 IPB029N06NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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SR 3,792.00
SR 4.74 Each (On a Reel of 800) (ex VAT)
SR 4,360.80
SR 5.451 Each (On a Reel of 800) (inc. VAT)
800
SR 3,792.00
SR 4.74 Each (On a Reel of 800) (ex VAT)
SR 4,360.80
SR 5.451 Each (On a Reel of 800) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
800
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products