Infineon Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 IPB013N06NF2SATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
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SR 8,736.00
SR 10.92 Each (On a Reel of 800) (ex VAT)
SR 10,046.40
SR 12.558 Each (On a Reel of 800) (inc. VAT)
800
SR 8,736.00
SR 10.92 Each (On a Reel of 800) (ex VAT)
SR 10,046.40
SR 12.558 Each (On a Reel of 800) (inc. VAT)
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
800
Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
2
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products