Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

RS Stock No.: 284-732Brand: InfineonManufacturers Part No.: IMT65R083M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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SR 56.40

SR 56.40 Each (ex VAT)

SR 64.86

SR 64.86 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1
Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1SR 56.40
2SR 112.80
3SR 169.20
4SR 225.60
5SR 282.00
6SR 338.40
7SR 394.80
8SR 451.20
9SR 507.60
10SR 564.00
11SR 620.40
12SR 676.80
13SR 733.20
14SR 789.60
15SR 846.00

SR 56.40

SR 56.40 Each (ex VAT)

SR 64.86

SR 64.86 Each (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 32 A, 650 V, 8-Pin PG-HSOF-8 IMT65R083M1HXUMA1

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Select packaging type

Standard

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1SR 56.40
2SR 112.80
3SR 169.20
4SR 225.60
5SR 282.00
6SR 338.40
7SR 394.80
8SR 451.20
9SR 507.60
10SR 564.00
11SR 620.40
12SR 676.80
13SR 733.20
14SR 789.60
15SR 846.00

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

32 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more