Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

RS Stock No.: 284-718Brand: InfineonManufacturers Part No.: IMT65R039M1HXUMA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

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SR 121,040.00

SR 60.52 Each (On a Reel of 2000) (ex VAT)

SR 139,196.00

SR 69.598 Each (On a Reel of 2000) (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

2000

Available in multiples of 2000
2000SR 121,040.00
4000SR 242,080.00
6000SR 363,120.00
8000SR 484,160.00
10000SR 605,200.00
12000SR 726,240.00
14000SR 847,280.00
16000SR 968,320.00
18000SR 1,089,360.00
20000SR 1,210,400.00
22000SR 1,331,440.00
24000SR 1,452,480.00
26000SR 1,573,520.00
28000SR 1,694,560.00
30000SR 1,815,600.00

SR 121,040.00

SR 60.52 Each (On a Reel of 2000) (ex VAT)

SR 139,196.00

SR 69.598 Each (On a Reel of 2000) (inc. VAT)

Infineon CoolSiC MOSFET 650 V G1 SiC N-Channel MOSFET, 61 A, 650 V, 8-Pin PG-HSOF-8 IMT65R039M1HXUMA1

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

2000

Available in multiples of 2000
2000SR 121,040.00
4000SR 242,080.00
6000SR 363,120.00
8000SR 484,160.00
10000SR 605,200.00
12000SR 726,240.00
14000SR 847,280.00
16000SR 968,320.00
18000SR 1,089,360.00
20000SR 1,210,400.00
22000SR 1,331,440.00
24000SR 1,452,480.00
26000SR 1,573,520.00
28000SR 1,694,560.00
30000SR 1,815,600.00

Stock information temporarily unavailable. please contact rs@ae.com.sa for more details.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

61 A

Maximum Drain Source Voltage

650 V

Series

CoolSiC MOSFET 650 V G1

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more