Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
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P.O.A.
Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
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Production pack (Tray)
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P.O.A.
Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Stock information temporarily unavailable.
Select packaging type
Production pack (Tray)
1
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount