Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1

RS Stock No.: 277-194Brand: InfineonManufacturers Part No.: FF2000UXTR33T2M1BPSA1
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Technical Document

Specifications

Brand

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

925 A

Maximum Drain Source Voltage

3300 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Country of Origin

Germany

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Stock information temporarily unavailable.

SR 48,625.71

SR 48,625.71 Each (ex VAT)

SR 55,919.57

SR 55,919.57 Each (inc. VAT)

Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1

1

Available in multiples of 1
1SR 48,625.71
2SR 97,251.42
3SR 145,877.13
4SR 194,502.84
5SR 243,128.55
6SR 291,754.26
7SR 340,379.97
8SR 389,005.68
9SR 437,631.39
10SR 486,257.10
11SR 534,882.81
12SR 583,508.52
13SR 632,134.23
14SR 680,759.94
15SR 729,385.65

SR 48,625.71

SR 48,625.71 Each (ex VAT)

SR 55,919.57

SR 55,919.57 Each (inc. VAT)

Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
Stock information temporarily unavailable.

1

Available in multiples of 1
1SR 48,625.71
2SR 97,251.42
3SR 145,877.13
4SR 194,502.84
5SR 243,128.55
6SR 291,754.26
7SR 340,379.97
8SR 389,005.68
9SR 437,631.39
10SR 486,257.10
11SR 534,882.81
12SR 583,508.52
13SR 632,134.23
14SR 680,759.94
15SR 729,385.65

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

Dual N

Maximum Continuous Drain Current

925 A

Maximum Drain Source Voltage

3300 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Country of Origin

Germany

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more