Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 162 A, 40 V, 3-Pin D2PAK AUIRF1404STRL
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
162 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.004 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
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SR 17,648.00
SR 22.06 Each (On a Reel of 800) (ex VAT)
SR 20,295.20
SR 25.369 Each (On a Reel of 800) (inc. VAT)
800
SR 17,648.00
SR 22.06 Each (On a Reel of 800) (ex VAT)
SR 20,295.20
SR 25.369 Each (On a Reel of 800) (inc. VAT)
800
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Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
162 A
Maximum Drain Source Voltage
40 V
Series
HEXFET
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.004 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Transistor Material
Si
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products